Measurement and simulation of charge diffusion in a small-pixel charge-coupled device
Beverly J. LaMarr, Gregory Y. Prigozhin, Eric D. Miller, Carolyn, Thayer, Marshall W. Bautz, Richard Foster, Catherine E. Grant, Andrew, Malonis, Barry E. Burke, Michael Cooper, Kevan Donlon, Christopher Leitz

TL;DR
This study measures charge diffusion in a high aspect-ratio CCD, compares simulation with experiment, and evaluates event detection algorithms, informing design for future high-resolution X-ray imaging detectors.
Contribution
It provides detailed measurements of charge packet diffusion in a small-pixel CCD and compares different event analysis algorithms, advancing detector performance understanding.
Findings
Charge packets follow a Gaussian distribution.
Sum-above-threshold algorithms outperform Gaussian fitting at 5.9 keV.
Read noise thresholds are critical for spectral resolution.
Abstract
Future high-resolution imaging X-ray observatories may require detectors with both fine spatial resolution and high quantum efficiency at relatively high X-ray energies (>5keV). A silicon imaging detector meeting these requirements will have a ratio of detector thickness to pixel size of six or more, roughly twice that of legacy imaging sensors. This implies greater diffusion of X-ray charge packets. We investigate consequences for sensor performance, reporting charge diffusion measurements in a fully-depleted, 50um thick, back-illuminated CCD with 8um pixels. We are able to measure the size distributions of charge packets produced by 5.9 keV and 1.25 keV X-rays in this device. We find that individual charge packets exhibit a gaussian spatial distribution, and determine the frequency distribution of event widths for a range of internal electric field strength levels. We find a standard…
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Taxonomy
TopicsCCD and CMOS Imaging Sensors · Medical Imaging Techniques and Applications · Advanced X-ray and CT Imaging
