Strain effect on Goos-H\"anchen shifts and group delay time in gapped graphene barrier

TL;DR

This paper studies how strain affects the Goos-H"anchen shifts and group delay time in gapped graphene, revealing that strain direction significantly influences these quantum transport properties and can enhance them.

Contribution

It provides a detailed analysis of strain effects on GH shifts and group delay in gapped graphene, highlighting the directional dependence and potential for control.

Findings

GH shifts and group delay time depend strongly on strain direction

Both quantities can be enhanced by applying strain

Strain effects are significant for quantum transport in graphene

Abstract

We investigate the strain effect on the Goos-H\"anchen (GH) shifts and group delay time for transmitted Dirac fermions in gapped graphene through a single barrier potential. The solutions of energy spectrum are used to compute the transmission probabilities together with the GH shifts and group delay time. Our results show that the two last quantities are strongly depending to weather the strain is applied along armchair or zigzag directions. In particular it found that both of quantities can be enhanced with the applied strain.