Entangling spin and charge degrees of freedom in semiconductor quantum dots
Marko J. Ran\v{c}i\'c

TL;DR
This paper proposes a theoretical scheme to entangle spin and charge qubits in semiconductor quantum dots, enabling long-term quantum memory and quantum gate operations within a triple quantum dot system.
Contribution
It introduces a novel method for entangling spin and charge qubits in a triple quantum dot configuration, facilitating quantum memory and gate implementation.
Findings
Scheme for entangling spin and charge qubits proposed
SWAP gate construction enables quantum memory application
Theoretical framework for quantum gate operations in quantum dots
Abstract
In this theoretical manuscript I propose a scheme for entangling a single electron semiconductor spin qubit with a single electron semiconductor charge qubit in a triangular triple quantum dot configuration. Two out of three quantum dots are used to define a single electron semiconductor charge qubit. Furthermore, the spin qubit is embedded in the Zeeman sub-levels of the third quantum dot. Combining single qubit gates with entangling CNOT gates allows one to construct a SWAP gate, and therefore to use the semiconductor spin qubit as a long-lived memory for the semiconductor charge qubit.
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