Two-dimensional electron gas at LaInO$_3$/BaSnO$_3$ interfaces controlled by a ferroelectric layer

TL;DR

This study demonstrates how a ferroelectric layer can effectively control the density and distribution of a two-dimensional electron gas at LaInO₃/BaSnO₃ interfaces, guiding future electronic device design.

Contribution

It introduces a method to manipulate 2DEG properties at oxide interfaces using ferroelectric polarization, based on first-principles calculations.

Findings

Polarization in BaTiO₃ enhances 2DEG density and confinement.

Opposite polarization depletes the 2DEG.

First-principles predictions guide interface engineering.

Abstract

With the example of LaInO$_{3}$/BaSnO$_3$, we demonstrate how both density and distribution of a two-dimensional electron gas (2DEG) formed at the interface between these perovskite oxides, can be efficiently controlled by a ferroelectric functional material. A polarization induced in a BaTiO$_3$ layer pointing toward the interface enhances the polar discontinuity which, in turn, significantly increases the 2DEG density and confinement, while, the opposite polarization depletes the 2DEG. Our predictions and analysis, based on first-principles calculations, can serve as a guide for designing such material combinations to be used in electronic devices.