Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

TL;DR

This paper proposes a novel negative capacitance topological quantum field-effect transistor (TQFET) that leverages ferroelectric materials to enhance electric field switching, aiming for ultra-low voltage and energy consumption.

Contribution

It introduces the concept of integrating negative capacitance with TQFETs to improve switching efficiency and discusses the materials challenges involved.

Findings

Potential for very low switching voltages and energies.

Feasibility of using ferroelectric materials for electric field amplification.

Discussion of materials challenges for implementation.

Abstract

A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${_3}$Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.