Advancement of the Homogeneous Background Method for the Computational Simulation of Electrochemical Interfaces
Arthur Hagopian, Marie-Liesse Doublet, Jean-S\'ebastien Filhol, Tobias, Binninger

TL;DR
This paper introduces an improved homogeneous background method for DFT simulations of electrochemical interfaces, eliminating the need for energy corrections and active electron fraction specification, thus broadening its applicability.
Contribution
The authors develop an advanced HBM that simplifies charged interface simulations by removing the need for boundary location and energy corrections, especially in complex systems with adsorbates or explicit solvents.
Findings
Excellent agreement with Poisson-Boltzmann model in interfacial charging
Applicable to various metal electrodes in high-dielectric solvents
Facilitates simulations without specifying active electron fraction
Abstract
Computational studies of electrochemical interfaces based on density-functional theory (DFT) play an increasingly important role in present research on electrochemical processes for energy conversion and storage. The homogeneous background method (HBM) offers a straightforward approach to charge the electrochemical system within DFT simulations, but it typically requires the specification of the "active" fraction of excess electrons based on a certain choice of the electrode-electrolyte boundary location, which can be difficult in presence of electrode-surface adsorbates or explicit solvent molecules. In this work, we present a methodological advancement of the HBM, both facilitating and extending its applicability. The advanced version neither requires energy corrections nor the specification of the "active" fraction of excess electrons, providing a versatile and readily available…
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