TA-LRW: A Replacement Policy for Error Rate Reduction in STT-MRAM Caches
Elham Cheshmikhani, Hamed Farbeh, Seyed Ghassem Miremadi, Hossein, Asadi

TL;DR
This paper introduces TA-LRW, a cache replacement policy for STT-MRAM that reduces error rates by distributing write operations to prevent heat accumulation, significantly improving reliability.
Contribution
The paper proposes TA-LRW, a novel cache replacement policy that minimizes heat buildup and error rates in STT-MRAM caches by ensuring distant write operations.
Findings
Reduces cache error rate by 94.8% compared to LRU.
Achieves 6.9x reduction in cache error rate.
Effectively distributes heat to improve reliability.
Abstract
As technology process node scales down, on-chip SRAM caches lose their efficiency because of their low scalability, high leakage power, and increasing rate of soft errors. Among emerging memory technologies, Spin-Transfer Torque Magnetic RAM (STT-MRAM) is known as the most promising replacement for SRAM-based cache memories. The main advantages of STT-MRAM are its non-volatility, near-zero leakage power, higher density, soft-error immunity, and higher scalability. Despite these advantages, the high error rate in STT-MRAM cells due to retention failure, write failure, and read disturbance threatens the reliability of cache memories built upon STT-MRAM technology. The error rate is significantly increased in higher temperatures, which further affects the reliability of STT-MRAM-based cache memories. The major source of heat generation and temperature increase in STT-MRAM cache memories is…
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Taxonomy
TopicsMagnetic properties of thin films · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices
