The Single-Photon Annihilation of Channeled Positron in Si Crystal
K.B. Korotchenko, Y.P. Kunashenko
TL;DR
This paper calculates the differential cross-section for single-photon annihilation of channeled positrons in silicon crystals, revealing complex orientation-dependent behaviors influenced by positron energy levels.
Contribution
It introduces a detailed calculation of the annihilation cross-section considering crystal orientation and positron energy levels, advancing understanding of positron interactions in crystals.
Findings
Cross-section varies complexly with entrance angle.
Orientation dependence differs across energy levels.
Cross-section depends on electron longitudinal energy.
Abstract
The differential cross-section of the single-photon annihilation of channeled positron on the K-shell electron of one of the crystal atoms is calculated and angular distribution of emitted photons is investigated. It is shown that cross-section has a complicated dependence on positron entrance angle with respect to crystal plane. It is demonstrated that this orientation dependence is different for different positron transverse energy levels. The dependence of the differential cross-section on the electron longitudinal energy is studied.
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Taxonomy
TopicsCrystallography and Radiation Phenomena · Radiation Detection and Scintillator Technologies · Muon and positron interactions and applications