Perpendicular magnetic tunnel junctions with multi-interface free layer
Pravin Khanal, Bowei Zhou, Magda Andrade, Yanliu Dang, Albert Davydov,, Ali Habiboglu, Jonah Saidian, Adam Laurie, Jian-Ping Wang, Daniel B Gopman, and Weigang Wang
TL;DR
This paper investigates perpendicular magnetic tunnel junctions with multi-interface free layers, demonstrating high magnetoresistance and thermal stability suitable for future high-density MRAM applications.
Contribution
It introduces multi-interface free layers with various coupling materials, showing enhanced magnetoresistance and stability after annealing, advancing MRAM technology.
Findings
Achieved over 200% tunneling magnetoresistance after annealing.
Strong dependence of TMR on CoFeB layer thickness.
Mo and MgO as effective coupling layers for high TMR.
Abstract
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular magnetic tunnel junctions with composite free layers where multiple ferromagnet/nonmagnet interfaces can contribute to the thermal stability. Different nonmagnetic materials (MgO, Ta, Mo) have been employed as the coupling layers in these multi-interface free layers. The evolution of junction properties under different annealing conditions is investigated. A strong dependence of tunneling magnetoresistance on the thickness of the first CoFeB layer has been observed. In junctions where Mo and MgO are used as coupling layers, large tunneling magnetoresistance above 200% has been achieved after 400{\deg}C annealing.
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