Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions

TL;DR

This paper demonstrates the fabrication of epitaxial graphene p-n junctions with quantized resistance suitable for resistance standards and proposes designs for programmable standards spanning six orders of magnitude.

Contribution

It introduces a novel approach using epitaxial graphene p-n junctions with h-BN dielectric for programmable resistance standards.

Findings

Resistance across single junction is quantized at R_K with high precision.

Conditions identified for these devices to serve as resistance standards.

Designs proposed for programmable resistance standards over six orders of magnitude.

Abstract

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.