Charge doping to flat AgF2 monolayers in a chemical capacitor setup

TL;DR

This study explores doping strategies for flat AgF2 monolayers in a chemical capacitor setup, aiming to optimize their potential as high-temperature superconductors with controlled electron doping.

Contribution

It demonstrates the feasibility of doping AgF2 monolayers via a chemical capacitor setup and analyzes how doping levels influence superconducting properties.

Findings

Optimal doping level is around 14% holes per formula unit.

Electron doping allows precise control of doping levels and superconducting temperature.

Hole doping is limited by charge stability constraints.

Abstract

Flat monolayers of silver II fluoride, which could be obtained by epitaxial deposition on an appropriate substrate, have been recently predicted to exhibit very strong antiferromagnetic superexchange and to have large potential for ambient pressure superconductivity if doped to an optimal level. It was shown that AgF2 could become a magnetic glue based superconductor with a critical superconducting temperature approaching 200 K at optimum doping. In the current work we calculate the optimum doping to correspond to 14% of holes per formula unit, i.e. quite similar to that for oxocuprates II. Furthermore, using DFT calculations we show that flat AgF2 single layers can indeed be doped to a controlled extent using a recently proposed chemical capacitor setup. Hole doping associated with formation of Ag III proves to be difficult to achieve in the setup explored in this work as it falls at verge of charge stability of fluoride anions and does not affect the d x2 minus y2 manifold . However, in the case of electron doping, manipulation of different factors, such as number of dopant layers and the thickness of the separator, permits fine tuning of the doping level - and concomitantly TC - all the way from underdoped to overdoped regime (in a similar manner as chemical doping for the Nd2CuO4 analogue).