Gate-tuneable and chirality-dependent charge-to-spin conversion in Tellurium nanowires

TL;DR

This study demonstrates that Tellurium nanowires can electrically generate, manipulate, and detect spin polarization in a chirality-dependent manner, enabling potential applications in magnet-free spintronic devices.

Contribution

It introduces the first all-electrical control of spin polarization in chiral inorganic Tellurium nanowires, highlighting chirality-dependent effects and gate-tunable spin signals.

Findings

Chirality-dependent unidirectional magnetoresistance up to 7%

Spin polarization orientation determined by nanowire handedness

Electrostatic gating modulates spin polarization magnitude

Abstract

Chiral materials are the ideal playground for exploring the relation between symmetry, relativistic effects, and electronic transport. For instance, chiral organic molecules have been intensively studied to electrically generate spin-polarized currents in the last decade, but their poor electronic conductivity limits their potential for applications. Conversely, chiral inorganic materials such as Tellurium are excellent electrical transport materials, but have not been explored to enable the electrical control of spin polarization in devices. Here, we demonstrate the all-electrical generation, manipulation, and detection of spin polarization in chiral single-crystalline Tellurium nanowires. By recording a large (up to 7%) and chirality-dependent unidirectional magnetoresistance, we show that the orientation of the electrically generated spin polarization is determined by the nanowire handedness and uniquely follows the current direction, while its magnitude can be manipulated by an electrostatic gate. Our results pave the way for the development of magnet-free chirality-based spintronic devices.