A Light-Hole Quantum Well on Silicon
Simone Assali, Anis Attiaoui, Patrick Del Vecchio, Samik Mukherjee,, J\'er\^ome Nicolas, and Oussama Moutanabbir

TL;DR
This paper demonstrates a silicon-compatible germanium quantum well with strain-engineered light-hole states, enabling precise control of hole states for quantum communication and sensing applications.
Contribution
It introduces a novel germanium quantum well on silicon with strain-tuning to achieve light-hole ground states and controllable optical properties.
Findings
Achieved >1% in-plane tensile strain using germanium-tin buffer layers.
Demonstrated sharp interfaces with sub-nanometer broadening.
Observed room-temperature excitonic transitions tunable by strain and thickness.
Abstract
The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to the lack of scalable materials to properly tailor the valence band character and its energy offsets, the precise engineering of light-hole (LH) states remains a serious obstacle toward coherent photon-spin interfaces needed for a direct mapping of the quantum information encoded in photon flying qubits to stationary spin processor.4-9 Herein, to alleviate this long-standing limitation we demonstrate an all-group IV low-dimensional system consisting of highly tensile strained germanium quantum well grown on silicon allowing new degrees of freedom to control and manipulate the hole states. Wafer-level, high bi-isotropic in-plane tensile strain () is achieved using strain-engineered, metastable germanium-tin…
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Taxonomy
TopicsNeural Networks and Reservoir Computing · Semiconductor Quantum Structures and Devices · Photonic and Optical Devices
