XDWM: A 2D Domain Wall Memory
Arifa Hoque (1), Alex K. Jones (2), Sanjukta Bhanja (1) ((1), University of South Florida, (2) University of Pittsburgh)

TL;DR
This paper introduces XDWM, a novel 2D domain wall memory architecture enabling independent and orthogonal data shifting in nanowire arrays, supporting advanced data movement and in-memory processing with minimal current penalties.
Contribution
The paper proposes a new 2D DWM cross-point design (X-Cell) allowing orthogonal nanowire sharing, enabling logical shifting in both X and Y directions, and demonstrates its feasibility through magnetic and SPICE simulations.
Findings
XDWM introduces a 6.25% shift current penalty.
Correct shifting achieved in nanowire bundles in both dimensions.
Leakage current between nanowires is ≤3%, reducing sneak path issues.
Abstract
Domain-Wall Memory (DWM) structures typically bundle nanowires shifted together for parallel access. Ironically, this organization does not allow the natural shifting of DWM to realize \textit{logical shifting} within data elements. We describe a novel 2-D DWM cross-point (X-Cell) that allows two individual nanowires placed orthogonally to share the X-Cell. Each nanowire can operate independently while sharing the value at the X-Cell. Using X-Cells, we propose an orthogonal nanowire in the Y dimension overlaid on a bundle of X dimension nanowires for a cross-DWM or XDWM. We demonstrate that the bundle shifts correctly in the X-Direction, and that data can be logically shifted in the Y-direction providing novel data movement and supporting processing-in-memory. We conducted studies on the requirements for physical cell dimensions and shift currents for XDWM. Due to the non-standard…
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Taxonomy
TopicsMagnetic properties of thin films · Chemical and Physical Properties of Materials · Advanced Memory and Neural Computing
