Disorder-dominated quantum criticality in moir\'e bilayers
Yuting Tan, Pak Ki Henry Tsang, and V. Dobrosavljevi\'c

TL;DR
This paper investigates disorder-driven quantum criticality in moiré bilayers, proposing a minimal model that explains observed metal-insulator transitions across various device conditions, emphasizing the role of disorder outside strongly correlated regimes.
Contribution
It introduces a minimal theoretical model capturing the interplay of interactions and disorder in moiré bilayers, explaining experimental trends in metal-insulator transitions.
Findings
Model reproduces experimental transition trends
Disorder plays a dominant role outside Mott physics
Explains similarities with other disorder-driven MITs
Abstract
Moir\'e bilayer materials have recently attracted much attention following the discovery of various correlated insulating states at specific band fillings. Here we discuss the metal-insulator transitions (MITs) that have been observed in the same devices, but at fillings far from the strongly correlated regime dominated by Mott-like physics, displaying many similarities to other examples of disorder-dominated MITs. We propose a minimal theoretical model describing the interplay of interactions and disorder, which able to capture most experimental trends observed on several devices.
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Taxonomy
TopicsForce Microscopy Techniques and Applications · Advanced Electron Microscopy Techniques and Applications
