Analysis of the spontaneous emission limited linewidth of an integrated III-V/SiN laser

TL;DR

This paper develops a comprehensive model to calculate the spontaneous emission limited linewidth of hybrid silicon-III-V lasers, incorporating multimode laser theory and quantum-optical effects, with application to quantum-dot lasers in high-Q cavities.

Contribution

It introduces a novel modeling approach combining multimode laser theory and quantum optics for integrated hybrid lasers, addressing linewidth limitations.

Findings

Model accurately predicts linewidth narrowing in quantum-dot lasers

Highlights importance of quantum-optical effects in linewidth calculations

Demonstrates potential for optimizing integrated laser designs

Abstract

This paper describes a calculation of the spontaneous emission limited linewidth of a semiconductor laser consisting of hybrid or heterogeneously integrated, silicon and III-V intracavity components. Central to the approach are a) description of the multi-element laser cavity in terms of composite laser/free-space eigenmodes, b) use of multimode laser theory to treat mode competition and multiwave mixing, and c) incorporation of quantum-optical contributions to account for spontaneous emission effects. Application of the model is illustrated for the case of linewidth narrowing in an InAs quantum-dot laser coupled to a high-Q SiN cavity.