3D arrangement of epitaxial graphene conformally grown on porousified crystalline SiC
Stefano Veronesi, Georg Pfusterschmied, Filippo Fabbri, Markus, Leitgeb, Omer Arif, Daniel Esteban Arenas, Sara Bals, Ulrich Schmid, Stefan, Heun

TL;DR
This paper reports the first successful three-dimensional growth of high-quality epitaxial graphene on porousified crystalline SiC, opening new avenues for applications in sensing, energy, and catalysis due to its unique porous structure.
Contribution
It introduces a novel method for growing uniform, high-quality epitaxial graphene inside nanoporous SiC, combining advanced porosification and ultra high vacuum growth techniques.
Findings
Pore diameter of 180 nm confirmed by electron tomography
High-quality graphene with 2D/G ratio >1 verified by Raman spectroscopy
Uniform graphene coverage across the porous SiC surface
Abstract
Nanoporous materials represent a versatile solution for a number of applications ranging from sensing, energy applications, catalysis, drug delivery, and many others. The synergy between the outstanding properties of graphene with a three-dimensional porous structure, circumventing the limits of its 2D nature, constitutes therefore a breakthrough for many fields. We report the first three-dimensional growth of epitaxial graphene on a porousified crystalline 4H-SiC(0001). The wafer porosification is performed via a sequence of metal-assisted photochemical and photoelectrochemical etching in hydrofluoric acid based electrolytes. Pore dimensions of the matrix have been evaluated by electron tomography resulting in an average diameter of 180 nm. Graphene growth is performed in an ultra high vacuum environment at a base pressure of mbar. The graphene growth inside the pores is…
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