Electronic structure of rare-earth mononitrides: quasiatomic excitations and semiconducting bands
Anna Galler, Leonid V. Pourovskii

TL;DR
This study uses advanced computational methods to analyze the electronic structure of rare-earth mononitrides, revealing their semiconducting properties and the behavior of 4f states, which are relevant for spintronics.
Contribution
It applies a combined DFT+DMFT approach with Hubbard-I and modified Becke-Johnson potential to accurately model the complex electronic structure of LnN series.
Findings
All LnN are pd semiconductors with gaps 1.02-2.14 eV.
The band gap is direct for light Ln and indirect for heavy Ln.
4f states are above the 5d conduction band across the series.
Abstract
The electronic structure of the rare-earth mononitrides LnN (where Ln=rare-earth), which are promising materials for future spintronics applications, is difficult to resolve experimentally due to a strong influence of defects on their transport and optical properties. At the same time, LnN are challenging for theory, since wide semiconducting/semimetallic 2p and 5d bands need to be described simultaneously with strongly correlated 4f states. Here, we calculate the many-body spectral functions and optical gaps of a series of LnN (with Ln= Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er) by a density-functional+dynamical mean-field theory (DFT+DMFT) approach treating the correlated Ln 4f shells within the quasi-atomic Hubbard-I approximation. The on-site Coulomb interaction in the 4f shell is evaluated by a constrained DFT+Hubbard-I approach. Furthermore, to improve the treatment of semiconducting bands…
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Taxonomy
TopicsInorganic Chemistry and Materials · Boron and Carbon Nanomaterials Research · Metal and Thin Film Mechanics
