Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

TL;DR

This paper reports on a monolithic silicon pixel detector prototype fabricated in SiGe BiCMOS technology, demonstrating high detection efficiency and excellent time resolution in laboratory and beam tests.

Contribution

It introduces a novel monolithic silicon pixel detector in SiGe BiCMOS technology with detailed performance characterization and testing results.

Findings

Detection efficiency of 99.9% measured

Time resolution of 36.4 ps achieved

Effective operation at various bias voltages and currents

Abstract

A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of $\left(99.9^{+0.1}_{-0.2}\right)$% was measured together with a time resolution of $(36.4 \pm 0.8)$ps at the highest preamplifier bias current working point of 150 $\mu$A and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.