High thermoelectric performance in excitonic bilayer graphene

TL;DR

This study demonstrates that AB-stacked bilayer graphene exhibits exceptionally high thermoelectric efficiency at room temperature due to excitonic effects, making it promising for thermoelectric device applications.

Contribution

The paper introduces a comprehensive model showing high thermoelectric performance in bilayer graphene considering full interaction bandwidth and excitonic effects.

Findings

High electronic figure of merit at room temperature

Significant impact of interlayer Coulomb interaction on thermal properties

Potential for high-performance thermoelectric devices

Abstract

We consider the excitonic effects on the thermal properties in the AB-stacked bilayer graphene. The calculations are based on the bilayer generalization of the usual Hubbard model at the half-filling. The full interaction bandwidth is used without any low-energy assumption. We obtain the unusually high values for the electronic figure of merit even at the room-temperatures which is very promising for the thermoelectric applications of the AB-bilayer structure. We discuss the effects of the interlayer Coulomb interaction and temperature on different thermal parameters in the bilayer graphene and we emphasize the role of the charge neutrality point in the thermal properties and within the excitonic insulator transition scenario. The calculated values of the rate of thermoelectric conversion efficiency suggest the possibility of high-performance device applications of AB-bilayer graphene.