MoSe2/WS2 heterojunction photodiode integrated with a silicon nitride waveguide for visible light detection with high responsivity

TL;DR

This paper reports the development of a high-responsivity, low-noise MoSe2/WS2 heterojunction photodiode integrated with a silicon nitride waveguide, suitable for visible and near-infrared light detection on a chip scale.

Contribution

It introduces a novel integrated heterojunction photodetector with high responsivity and low dark current, demonstrating its application in characterizing optical components on a chip.

Findings

Achieved ~1 A/W responsivity at 780 nm wavelength.

Suppressed dark current to ~50 pA, significantly lower than reference samples.

Measured noise equivalent power of ~1x10^-12 W/Hz^0.5.

Abstract

We demonstrate experimentally the realization and the characterization of a chip scale integrated photodetector for the visible and the near infrared spectral regime based on the integration of a MoSe2/WS2 heterojunction on top of a silicon nitride waveguide. This configuration achieves high responsivity of ~1 A/W at the wavelength of 780 nm (indicating an internal gain mechanism), while suppressing the dark current to the level of ~50 pA, much lower as compared to a reference sample of just MoSe2 without WS2. We have measured the power spectral density of the dark current to be as low as ~1x10^-12 A/Hz^0.5 , from which we extract the noise equivalent power (NEP) to be ~1x10^-12 W/Hz^0.5. To demonstrate the usefulness of the device, we use it for the characterization of the transfer function of a microring resonator that is integrated on the same chip as the photodetector. The ability to integrate local photodetectors on chip and to operate such devices with high performance at the visible and the near-infrared regime is expected to play a critical role in future integrated devices in the field of optical communications, quantum photonics, biochemical sensing and more.