Current-in-plane magnetoresistance in chiral-molecule/ferromagnetic metal bilayer due to thermally induced spin polarization

TL;DR

This study demonstrates room-temperature current-in-plane magnetoresistance in chiral molecule/ferromagnetic bilayers driven by thermally induced spin polarization, independent of charge current through the molecules.

Contribution

It reveals a novel thermally driven CIP-MR effect in chiral molecule/ferromagnetic bilayers, distinct from previous charge-current-dependent effects.

Findings

CIP-MR observed at room temperature without bias current

Thermally induced spin polarization is key to the effect

Distinct from charge-current-induced chirality effects

Abstract

We report chirality-induced current-in-plane magnetoresistance (CIP-MR) in chiral molecule/ferromagnetic metal bilayer at room temperature. The previously reported chiralityinduced current-perpendicular-to-plane magnetoresistance (CPP-MR) originates from the chiral induced spin-selectivity (CISS) effect that needs charge-current passing through the molecule. In contrast, the observed CIP-MR in the present study requires no bias charge current through the molecule. The temperature dependence of CIP-MR suggests thermally induced spin-polarization in the chiral molecules is the key for the observed MR.