Isospin competitions and valley polarized correlated insulators in twisted double bilayer graphene
Le Liu, Shihao Zhang, Yanbang Chu, Cheng Shen, Yuan Huang, Yalong, Yuan, Jinpeng Tian, Jian Tang, Yiru Ji, Rong Yang, Kenji Watanabe, Takashi, Taniguchi, Dongxia Shi, Jianpeng Liu, Wei Yang, Guangyu Zhang

TL;DR
This paper reports the discovery of new correlated insulators and topological phases in twisted double bilayer graphene, driven by displacement field-induced competition between spin and valley degrees of freedom, revealing controllable isospin polarization.
Contribution
It demonstrates the control of isospin polarization and the emergence of valley polarized correlated and topological insulators in TDBG through displacement field tuning, with experimental and theoretical validation.
Findings
Observation of valley polarized correlated insulators at high displacement fields.
Detection of a valley polarized Chern insulator with C=2 and quantized Hall conductance.
Identification of a valley polarized Fermi surface with topologically trivial Landau levels.
Abstract
New phase of matter usually emerges when a given symmetry breaks spontaneously, which can involve charge, spin, and valley degree of freedoms. Here, we report an observation of new correlated insulators evolved from spin polarized states to valley polarized states in AB-BA stacked twisted double bilayer graphene (TDBG). The transition of the isospin polarization is a result of the competition between spin and valley, driven by the displacement field (D). At a high field |D| > 0.7 V/nm, we observe valley polarized correlated insulators with a big Zeeman g factor of ~10, both at v = 2 in the moir\'e conduction band and more surprisingly at v = -2 in the moir\'e valence band. At a medium field |D| < 0.6 V/nm, by contrast, it is a conventional spin polarized correlated insulator at v = 2 and a featureless metal at v = -2. Moreover, we observe a valley polarized Chern insulator with C = 2…
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