Novel transport phenomena in graphene induced by strong spin-orbit interaction

TL;DR

This paper reviews how proximity effects from transition metal dichalcogenides can significantly enhance spin-orbit interactions in graphene, leading to novel phenomena like robust supercurrents under high magnetic fields.

Contribution

It highlights the potential of TMD substrates to induce strong spin-orbit interactions in graphene and explores the resulting novel physical phenomena.

Findings

Enhanced spin-orbit interactions via proximity effect

Induction of robust supercurrents under high magnetic fields

Differences in SOI induction depending on TMD underlayer

Abstract

Graphene is known to have small intrinsic spin-orbit Interaction (SOI). In this review, we demonstrate that SOIs in graphene can be strongly enhanced by proximity effect when graphene is deposited on the top of transition metal dichalcogenides. We discuss the symmetry of the induced SOIs and differences between TMD underlayers in the capacity of inducing strong SOIs in graphene. The strong SOIs contribute to bring novel phenomena to graphene, exemplified by robust supercurrents sustained even under tesla-range magnetic fields.