Boron phosphide films by reactive sputtering: Searching for a p-type transparent conductor

TL;DR

This study demonstrates reactive sputtering to produce boron phosphide films with high hole concentrations and explores doping and crystallization, advancing the potential of BP as a p-type transparent conductor.

Contribution

It introduces a new deposition method for BP films, achieving record hole concentrations and confirming bipolar doping capabilities.

Findings

Highest hole concentration for p-type BP reported ($5 imes 10^{20}$ cm$^{-3}$)

Bipolar doping in BP confirmed

Crystallization requires annealing at ≥1000°C

Abstract

With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. Previous experimental reports deal almost exclusively with epitaxial, nominally undoped BP films by chemical vapor deposition. High hole concentrations were often observed, but it is unclear if native defects alone can be responsible for it. Besides, the feasibility of alternative deposition techniques has not been clarified and optical characterization is generally lacking. In this work, we demonstrate reactive sputtering of amorphous BP films, their partial crystallization in a P-containing annealing atmosphere, and extrinsic doping by C and Si. We obtain the highest hole concentration reported to date for p-type BP ($5 \times 10^{20}$ cm$^{-3}$) using C doping under B-rich conditions. We also confirm that bipolar doping is possible in BP. An anneal temperature of at least 1000 $^\circ$C is necessary for crystallization and dopant activation. Hole mobilities are low and indirect optical transitions are much stronger than predicted by theory. Low crystalline quality probably plays a role in both cases. High figures of merit for transparent conductors might be achievable in extrinsically doped BP films with improved crystalline quality.