Direct observation of multiple conduction-band minima in high-performance thermoelectric SnSe
Mario Okawa, Yuka Akabane, Mizuki Maeda, Gangjian Tan, Li-Dong Zhao,, Mercouri G. Kanatzidis, Takeshi Suzuki, Mari Watanabe, Jiadi Xu, Qianhui Ren,, Masami Fujisawa, Teruto Kanai, Jiro Itatani, Shik Shin, Kozo Okazaki, Naurang, L. Saini, Takashi Mizokawa

TL;DR
This study uses time- and angle-resolved photoemission spectroscopy to observe multiple conduction-band minima in SnSe, providing insights into its high thermoelectric performance and potential for anisotropic thermoelectric applications.
Contribution
First direct observation of multiple conduction-band minima in SnSe using advanced photoemission spectroscopy techniques.
Findings
Conduction band minima are populated 90-550 fs after photoexcitation.
Observed conduction bands match theoretical band structure calculations.
Multiple conduction minima imply potential for high, anisotropic thermoelectric performance.
Abstract
We report time- and angle-resolved photoemission spectroscopy on SnSe which currently attracts great interest due to its extremely high thermoelectric performance. Laser-assisted photoemission signals are observed within 20 fs of the pump pulse arrival. Around 30-50 fs after the photoexcitation, the conduction band minima are not populated by the photoexcited electrons while the valence bands are considerably broadened. In going from 90 fs to 550 fs after the photoexcitation, the photoexcited carriers are decayed into the multiple conduction band minima. The observed conduction bands are consistent with the band structure calculations. The multiple conduction minima suggest possibility of high and anisotropic thermoelectric performance of n-type SnSe single crystal if it is realized.
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · Advanced Thermoelectric Materials and Devices · Advanced Semiconductor Detectors and Materials
