Pressure Sensor with New Electrical Circuit Utilizing Bipolar Junction Transistor

TL;DR

This paper presents a high-sensitivity MEMS pressure sensor chip that uses a novel bipolar junction transistor-based electrical circuit with negative feedback, enabling smaller size without sacrificing sensitivity.

Contribution

The work introduces a new electrical circuit for pressure sensors utilizing BJTs and negative feedback, reducing chip size while maintaining sensitivity.

Findings

Theoretical model matches experimental data.

Sensor achieves high sensitivity across 1-60 kPa range.

Circuit design allows for miniaturization of pressure sensors.

Abstract

High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.