Elucidating the Influence of Native Defects on Electrical and Optical Properties in Semiconducting Oxides: An Experimental and Theoretical Investigation

TL;DR

This paper combines experimental and theoretical methods to study how native defects in semiconducting oxides influence their electrical and optical properties, aiming to improve optoelectronic device performance.

Contribution

It provides a comprehensive analysis of defect-induced changes in optical and electrical properties using first-principles calculations and experimental measurements.

Findings

Defects enhance photocurrent and switching speed.

Defects increase optical absorption in semiconducting oxides.

Experimental results confirm defect-related improvements in optoelectronic performance.

Abstract

Defect engineering using self-doping or creating vacancies in polycrystalline oxide based materials has profound influence on optical absorption, UV photo detection, and electrical switching. However, defects induced semiconducting oxide devices show enhancement in photo detection and photosensitivity, and hence still remain interesting in the field of optoelectronics. In this study, defect engineering in semiconducting oxide materials is discussed along with their roles in optoelectronic device-based applications. Theoretical investigations have been done for identifying defect states by performing first-principles electronic structure calculations, employing the density-functional theory. Particularly, in this work, we have focused on probing the defect-induced changes in optical and electrical processes by means of experimental as well as computational investigations. Hence, systematic experimental measurements of optical absorption, electrical switching, charge density, and photocurrent in defect-rich semiconducting oxide samples have been performed. Our results suggest that defects can lead to enhancement of optoelectronic properties such as photocurrent, switching speed, optical absorption, etc. for semiconducting oxide based devices.