Synthesis and crystal growth of novel layered bismuthides ATM2Bi2, (A = K, Rb; TM = Zn, Cd) with significant electron-deficient structure

TL;DR

This study reports the synthesis, crystal growth, and structural characterization of new layered bismuthides RbCd2Bi2, RbZn2Bi2, and KZn2Bi2, revealing their layered ThCr2Si2 structure and structural differences among them.

Contribution

First synthesis and detailed structural analysis of novel layered bismuthides RbCd2Bi2, RbZn2Bi2, and KZn2Bi2 using self-flux crystal growth.

Findings

All compounds crystallize in layered ThCr2Si2 structure.

Significant structural differences between RbCd2Bi2 and AZn2Bi2.

Crystals exhibit plate-like morphology with weak interlayer bonding.

Abstract

Layered bismuthides of the family ATM2Bi2 are showing very interesting structural and physical properties. Here, we report crystal growth and characterization of new ternary layered bismuthides: RbCd2Bi2, RbZn2Bi2 and KZn2Bi2. Single crystals were grown by self-flux technique. As grown crystals were characterized by combination of powder X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy and single crystal X-ray diffraction. All novel compounds crystallize in layered ThCr2Si2 structure type with plate-like morphology with weak bonding between layers. Significant structural difference between RbCd2Bi2 and AZn2Bi2 (A=K, Rb) was found.