Field-Effect Transistor Based on MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

TL;DR

This computational study explores how biaxial strain affects the electronic properties of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayer-based FETs, demonstrating tunable band gaps and high performance metrics.

Contribution

It introduces the first detailed analysis of strain effects on MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayer FETs, highlighting their potential for electronic applications.

Findings

Band gaps are tunable by biaxial strain.

FETs exhibit I$_{ON}$/I$_{OFF}$ ratios > 10^6.

Subthreshold swing ranges from 96 to 98 mV/dec.

Abstract

The electronic properties of a field-effect transistor with two different structures of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as the channel material in the presence of biaxial strain are investigated. The band structures show that these compounds are semiconductors with an indirect bandgap. Their band gaps can be adjusted by applying in-plane biaxial strain. In the following, the variation of the energies of the valleys and corresponding effective masses with respect to the strain are explored. Finally, the strained MoSi$_2$N$_4$ or WSi$_2$N$_4$ are used as the channel of a p-type FET and the corresponding current-voltage characteristic is explored. The results show this FET has an I$\mathrm{_{ON}}$/I$\mathrm{_{OFF}}$ ratio larger than $\mathrm{10^6}$ and subthreshold swing in the range of 96-98 mV/dec. The I$\mathrm{_{ON}}$/I$\mathrm{_{OFF}}$ ratio of these compounds with respect to strain are compared.