Extending the spectrum of fully integrated photonics

TL;DR

This paper introduces a novel integrated photonics platform combining III-V materials with silicon nitride waveguides on silicon wafers, enabling fully integrated photonic circuits at wavelengths shorter than silicon's bandgap with high coherence and temperature stability.

Contribution

The work presents the first fully integrated photonic integrated circuits at sub-micrometer wavelengths using a new III-V and silicon nitride integration platform, expanding spectral capabilities.

Findings

Achieved fully integrated lasers, photodetectors, modulators, and passives at sub-um wavelengths.

Demonstrated kHz-level linewidths at elevated temperatures.

Showcased high temperature performance and coherence in short-wavelength lasers.

Abstract

Integrated photonics has profoundly impacted a wide range of technologies underpinning modern society. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency. Over the last decade, the progression from pure III-V materials platforms to silicon photonics has significantly broadened the scope of integrated photonics by combining integrated lasers with the high-volume, advanced fabrication capabilities of the commercial electronics industry. Yet, despite remarkable manufacturing advantages, reliance on silicon-based waveguides currently limits the spectral window available to photonic integrated circuits (PICs). Here, we present a new generation of integrated photonics by directly uniting III-V materials with silicon nitride (SiN) waveguides on Si wafers. Using this technology, we present the first fully integrated PICs at wavelengths shorter than silicon's bandgap, demonstrating essential photonic building blocks including lasers, photodetectors, modulators and passives, all operating at sub-um wavelengths. Using this platform, we achieve unprecedented coherence and tunability in an integrated laser at short wavelength. Furthermore, by making use of this higher photon energy, we demonstrate superb high temperature performance and, for the first time, kHz-level fundamental linewidths at elevated temperatures. Given the many potential applications at short wavelengths, the success of this integration strategy unlocks a broad range of new integrated photonics applications.