Modified Band Alignment Method to Obtain Hybrid Functional Accuracy from Standard DFT: Application to Defects in Highly Mismatched III-V:Bi Alloys

TL;DR

This study introduces a modified band alignment correction method to accurately predict hybrid functional defect energies from standard DFT calculations, enabling faster high-throughput defect analysis in III-V:Bi alloys.

Contribution

A new band alignment correction approach is proposed to approximate hybrid functional results from local DFT calculations at significantly reduced computational cost.

Findings

Corrected LDA defect energies have MAE of 0.175 eV compared to HSE.

Method achieves about 20x speedup over hybrid functional calculations.

Transferability demonstrated on external defect databases.

Abstract

This paper provides an accurate theoretical defect energy database for pure and Bi-containing III-V (III-V:Bi) materials and investigates efficient methods for high-throughput defect calculations based on corrections of results obtained with local and semi-local functionals. Point defects as well as nearest-neighbor and second-nearest-neighbor pair defects were investigated in charge states ranging from -5 to 5. Ga-V:Bi systems (GaP:Bi, GaAs:Bi, and GaSb:Bi) were thoroughly investigated with significantly slower, higher fidelity hybrid Heyd-Scuseria-Ernzerhof (HSE) and significantly faster, lower fidelity local density approximation (LDA) calculations. In both approaches spurious electrostatic interactions were corrected with the Freysoldt correction. The results were verified against available experimental results and used to assess the accuracy of a previous band alignment correction. Here, a modified band alignment method is proposed in order to better predict the HSE values from the LDA ones. The proposed method allows prediction of defect energies with values that approximate those from the HSE functional at the computational cost of LDA (about 20x faster for the systems studied here). Tests of selected point defects in In-V:Bi materials resulted in corrected LDA values having a mean absolute error (MAE)=0.175 eV for defect levels vs. HSE. The method was further verified on an external database of defects and impurities in CdX (X=S, Se, Te) systems, yielding a MAE=0.194 eV. These tests demonstrate the correction to be sufficient for qualitative and semi-quantitative predictions, and may suggest transferability to many semiconductor systems without significant loss in accuracy. Properties of the remaining In-V:Bi defects and all Al-V:Bi defects were predicted with the use of the modified band alignment method.