Dirac-Source Diode with Sub-unity Ideality Factor

TL;DR

This paper introduces a Dirac-source Schottky diode with an ideality factor below 1, achieved through graphene's linear density of states, enabling ultra-low power rectification with high rectifying ratio.

Contribution

It presents the first low-power diode with an ideality factor less than 1, utilizing graphene's properties to surpass thermionic limits in diode performance.

Findings

Achieved an ideality factor n<1 over a wide current range.

Demonstrated a high rectifying ratio of 100,000.

Realized a steep-slope characteristic in the diode.

Abstract

An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power diode rectifier, which breaks the thermionic limit of an ideality factor (n) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS Schottky diode, which exhibits a steep-slope characteristic curve, by utilising the linear density of states (DOSs) of graphene. For the developed DS Schottky diode, n<1 for more than two decades of drain current with a minimum value of 0.8, and the rectifying ratio is large (100000). The realisation of a DS Schottky diode paves the way for the development of low-power electronic circuits.