Ultrafast multi-photon excitation of ScVO$_4$:Bi$^{3+}$ for luminescence thermometry

TL;DR

This paper introduces a multi-photon excitation method for luminescence thermometry using ScVO$_4$:Bi$^{3+}$, demonstrating advantages in suppressing background fluorescence and maintaining high temperature sensitivity.

Contribution

The study presents the first application of multi-photon excitation for luminescence thermometry with ScVO$_4$:Bi$^{3+}$, showing improved signal clarity and comparable sensitivity to traditional single-photon methods.

Findings

Multi-photon excitation involves 2- and 3-photon processes.

MPE suppresses interfering fluorescence signals.

Temperature sensitivity is maintained with MPE.

Abstract

We demonstrate a multi-photon excitation (MPE) scheme for luminescence thermometry using ScVO$_4$:Bi$^{3+}$. MPE is performed using a 37 fs Ti:Sapphire laser pulse centred at 800 nm. Log-log plots of the phosphorescence intensity versus excitation power show that the 800 nm MPE of ScVO$_4$:Bi$^{3+}$ involves a 2- and 3-photon absorption process in comparison to a single-photon excitation (SPE) process at 266 nm and 400 nm. Spectroscopic investigation shows that with the 800 nm MPE and 266 nm SPE schemes, the emission spectra of ScVO$_4$:Bi$^{3+}$ are similarly characterized by emissions of the VO$_4^{3-}$ groups and Bi$^{3+}$. The MPE is advantageous to suppress fluorescence which interfere with the phosphorescence signal. We demonstrate this aspect for a ScVO$_4$:Bi$^{3+}$ coating applied on an alumina substrate. The luminescence lifetime is calibrated with temperature over 294-334 K; the MPE scheme has an equally impressive temperature sensitivity (3.4-1.7% / K) and precision (0.2-0.7K) compared to the SPE schemes. The MPE scheme can be applied to a variety of phosphors and is valuable for precise temperature measurements even in applications where isolating interfering background emissions is challenging.