Antiferromagnetism and large magnetoresistance in GdBi single crystal

TL;DR

This study reports the growth and characterization of GdBi single crystals, revealing antiferromagnetic order at 27.5 K and an extremely large, non-saturating magnetoresistance of 10,000% at 2 K and 14 T, linked to Fermi surface properties.

Contribution

First detailed investigation of GdBi single crystals showing large magnetoresistance and antiferromagnetic order, with insights into Fermi surface and charge compensation effects.

Findings

Antiferromagnetic order at 27.5 K confirmed.

Magnetoresistance reaches 10,000% at 2 K in 14 T.

Fermi surface analysis indicates charge carrier compensation.

Abstract

Single crystal of the binary equi-atomic compound GdBi crystallizing in the rock salt type cubic crystal structure with the space group $Fm\bar{3}m$ has been grown by flux method. The electrical and magnetic measurements have been performed on well oriented single crystals. The antiferromagnetic ordering of the Gd moments is confirmed at $T_{\rm N} = 27.5$~K. The magnetization measurement performed at $2$~K along the principal crystallographic direction [100] did not show any metamagnetic transition and no sign of saturation up to $7$~T. Zero field electrical resistivity reveals a sharp drop at $27.5$~K suggesting a reduction in the spin disorder scattering due to the antiferromagnetic alignment of the Gd moments. The residual resistivity at $2$~K is 390~n$\Omega$cm suggesting a good quality of the grown crystal. The magneto resistance attains a value of $1.0~\times~10^{4}\%$ with no sign of saturation, in a field of $14$~T, at $T = 2$~K. Shubnikov de Hass (SdH) oscillations have been observed in the high field range of the magnetoresistance with five different frequencies corresponding to the extremal areas of the Fermi surface. Analysis of the Hall data revealed a near compensation of the charge carriers accounting for the extremely large magnetoresistance.