Atomic scale strain engineering of layered sheets on the surfaces of two-dimensional materials

TL;DR

This paper demonstrates atomic-scale strain engineering of 2D materials using STM tip-induced forces, revealing surface deformation effects, resolving longstanding anomalies, and enabling control over electronic properties like flat band formation.

Contribution

It introduces a method for atomic-scale strain engineering of layered 2D sheets and clarifies the origin of high atomic amplitude measurements on graphite surfaces.

Findings

Tip-induced deformations induce controlled atomic strain.

Surface elastic deformation explains anomalously high atomic amplitudes.

Strain engineering enables electronic flat band formation.

Abstract

Atomic modulations of two-dimensional materials using scanning tunneling microscope (STM) tip-induced forces modifies their mechanical and electrical properties. In situ topographic and spectroscopic probing through electrical tunneling has been used for straining sheets of graphite, monolayer graphene and NbSe2. The findings also resolve a thirty-five-year-old controversy involving numerous proposed models to explain the source of anomalously high measured atomic amplitudes (of up to 24 Angstroms, expected 0.2 Angstroms) from atomic corrugation on graphite surfaces. Our findings attributes the anomaly to surface elastic deformation characteristics of soft 2D monatomic sheets of graphene and graphite in contrast to NbSe2 which is associated with their local bonding configurations. The tip-induced deformations are shown to induce controlled strain on the material surface atomically and it offers a new way for strain engineering. Topographic deformation of formed graphitic Moire patterns reveals the inter-layer van der Waals (vdW) strength varying across its domains. In-situ tunneling spectroscopy associated with straining of the Moire domains reveals electronic flat band formation controllably thereby creating a platform for many-body correlations. The paper cautions anomalous observations when probing 2D materials at small gap distances with their strain induced effects and provides guidelines to exploit or avoid this effect.