Metallic vs. Semiconducting Properties of Quasi-One-Dimensional Tantalum Selenide van der Waals Nanoribbons

TL;DR

This study investigates how slight variations in selenium content in TaSe3 nanoribbons influence their electronic properties, revealing a transition from metallic to semiconducting behavior through combined spectroscopic, electrical, and theoretical analyses.

Contribution

It demonstrates that small stoichiometric changes and defects can induce a metal-semiconductor transition in TaSe3 nanoribbons, emphasizing the importance of local probing techniques like TERS.

Findings

Selenium deficiency correlates with semiconducting behavior in TaSe3 nanoribbons.

TERS and PL responses vary with Se content, indicating electronic structure changes.

DFT calculations suggest oxygen vacancies can open a bandgap, enabling a metal-to-semiconductor transition.

Abstract

We conducted a tip-enhanced Raman scattering spectroscopy (TERS) and photoluminescence (PL) study of quasi-1D TaSe3 nanoribbons exfoliated onto gold substrates. At a selenium deficiency of ~0.25 (Se/Ta=2.75,), the nanoribbons exhibit a strong, broad PL peak centered around ~920 nm (1.35 eV), suggesting their semiconducting behavior. Such nanoribbons revealed a strong TERS response under 785-nm laser excitation, allowing for their nanoscale spectroscopic imaging. Nanoribbons with a smaller selenium deficiency of ~0.15 (Se/Ta=2.85) did not show any PL or TERS response. The confocal Raman spectra of these samples agree with the previously-reported spectra of metallic TaSe3. The differences in the optical response of the nanoribbons examined in this study suggest that even small variations in Se content can induce changes in electronic structure, causing samples to exhibit either metallic or semiconducting character. The temperature-dependent electrical measurements of devices fabricated with both types of materials corroborate these observations. The density-functional-theory calculations revealed that incorporation of an oxygen atom in a Se vacancy can result in band gap opening and thus enable the transition from a metal to a semiconductor. However, the predicted bandgap is substantially smaller than that derived from PL data. These results indicate that the properties of van der Waals materials can vary significantly depending on stoichiometry, defect types and concentration, and possibly environmental and substrate effects. In view of this finding, local probing of nanoribbon properties with TERS becomes essential to understanding such low-dimensional systems.