Field-Free Deterministic Writing of SOT-MTJ by Unipolar Current

TL;DR

This paper presents a manufacturable method for field-free, deterministic writing of perpendicular SOT-MTJ devices using unipolar current pulses, enabling high-speed operation and high-density SOT-MRAM integration.

Contribution

It introduces a novel unipolar current-based approach for field-free SOT-MTJ writing that maintains high density and speed without additional magnetic fields.

Findings

Achieves 1 ns writing speed.

Operates reliably at 100°C.

Compatible with 200 mm wafer fabrication.

Abstract

We propose a manufacturable solution for field-free writing of perpendicular SOT-MTJ without sacrificing integration density on a 200 mm wafer. The field-free writing operation can be achieved by unipolar current pulses via engineering the interlayer exchange coupling in SOT-MTJ thin films. The proposed device can reach a high writing speed of up to 1 ns and work properly at temperature of 100 C. The deterministic writing of SOT-MTJ by unipolar current offers an effective approach for high density SOT-MRAM integration.