Excited State Spectroscopy of Boron Vacancy Defects in Hexagonal Boron Nitride using Time-Resolved Optically Detected Magnetic Resonance
Simon Baber, Ralph N. E. Malein, Prince Khatri, Paul S. Keatley, Shi, Guo, Freddie Withers, Andrew J. Ramsay, and Isaac J. Luxmoore

TL;DR
This study investigates the excited state properties of boron vacancy defects in hexagonal boron nitride using time-resolved optically detected magnetic resonance, revealing spin-dependent decay rates, zero-field splitting, and anti-crossing behaviors.
Contribution
It provides new spectroscopic signatures and insights into the spin dynamics of boron vacancies, including measurements of excited state zero-field splitting and anti-crossing phenomena.
Findings
Spin-dependent photoluminescence decay rates identified.
Zero-field splitting of 2.09 GHz measured for the excited state.
Anti-crossings observed at specific magnetic field orientations.
Abstract
We report optically detected magnetic resonance (ODMR) measurements of an ensemble of spin-1 negatively charged boron vacancies in hexagonal boron nitride. The photoluminescence decay rates are spin-dependent, with inter-system crossing rates of and for the and states, respectively. Time-gating the photoluminescence enhances the ODMR contrast by discriminating between different decay rates. This is particularly effective for detecting the spin of the optically excited state, where a zero-field splitting of is measured. The magnetic field dependence of the time-gated photoluminescence exhibits dips corresponding to the Ground (GSLAC) and excited-state (ESLAC) anti-crossings. Additional dips corresponding to anti-crossings with nearby spin-1/2 parasitic impurities are also observed.…
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