The unconventional two-parameter quantum valley pumping in graphene with a topological line defect
C D Ren, L Cui, W T Lu, H Y Tian, S K Wang

TL;DR
This paper demonstrates a novel quantum valley pumping mechanism in graphene with a line defect, showing cosinusoid phase dependence and valley-specific current flow without external strain.
Contribution
It introduces an unconventional two-parameter quantum pumping method in graphene that exploits valley tunneling and defect properties, differing from traditional sinusoidal models.
Findings
Pumped current exhibits cosinusoid phase dependence.
Valley currents flow in opposite directions along the defect.
Controllable valley current is achieved without strain.
Abstract
Based on the Keldysh Green's function method, we report an unconventional two-parameter quantum pumping in graphene with a line defect. It is found that different from the conventional sinusoidal relation, the pumped current in this device is cosinusoid dependence on the phase difference between the two pumping potentials, which adopts its positive/nagative maximum value at while tends to zero at . This phenomenon is related to the peculiar valley tunneling characteristics across the line defects and the exchange of valley indices on both sides of the line defect. Moreover, the pumped currents from the two valleys will flow in opposite directions along the line defect, indicating that the controllable valley current can be pumped out in the line defect without the application of strain field in graphene.
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Taxonomy
TopicsGraphene research and applications · Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design
