Ab-initio calculation of point defect equilibria during heat treatment: Nitrogen, hydrogen, and silicon doped diamond

TL;DR

This paper presents an ab-initio computational method to predict defect equilibria during heat treatment in doped diamond, enabling efficient defect engineering and materials design.

Contribution

It introduces a first-principles approach to model defect formation and transformation during heat treatments, validated against extensive experimental data in diamond.

Findings

Predicted defect concentrations match experimental observations.

Demonstrated the pressure and temperature dependence of defect stability.

Enabled design of heat treatments for defect control in semiconductors.

Abstract

Point defects are responsible for a wide range of optoelectronic properties in materials, making it crucial to engineer their concentrations for novel materials design. However, considering the plethora of defects in co-doped semiconducting and dielectric materials and the dependence of defect formation energies on heat treatment parameters, process design based on an experimental trial and error approach is not an efficient strategy. This makes it necessary to explore computational pathways for predicting defect equilibria during heat treatments. The accumulated experimental knowledge on defect transformations in diamond is unparalleled. Therefore, diamond is an excellent material for benchmarking computational approaches. By considering nitrogen, hydrogen, and silicon doped diamond as a model system, we have investigated the pressure dependence of defect formation energies and calculated the defect equilibria during heat treatment of diamond through ab-initio calculations. We have plotted monolithic-Kr\"oger-Vink diagrams for various defects, representing defect concentrations based on process parameters, such as temperature and partial pressure of gases used during heat treatments of diamond. The method demonstrated predicts the majority of experimental data, such as nitrogen aggregation path leading towards the formation of the B center, annealing of the B, H3, N3, and NVHx centers at ultra high temperatures, the thermal stability of the SiV center, and temperature dependence of NV concentration. We demonstrate the possibility of designing heat treatments for a wide range of semiconducting and dielectric materials by using a relatively inexpensive yet robust first principles approach, significantly accelerating defect engineering and high-throughput novel materials design.