Contact conductance governs metallicity in conducting metal oxide nanocrystal films
Corey M. Staller, Stephen L. Gibbs, Xing Yee Gan, Jay T. Bender,, Karalee Jarvis, Gary K. Ong, Delia J. Milliron

TL;DR
This paper demonstrates that in nanocrystal films, the transition from insulating to metallic behavior is primarily controlled by the conductance at inter-nanocrystal contacts, not just electron concentration.
Contribution
It establishes a phase diagram linking inter-nanocrystal contact conductance to metallicity, highlighting the importance of contact conductance in nanocrystal film transport properties.
Findings
IMT is governed by inter-nanocrystal contact conductance.
Conventional metallic behavior requires contact conductance to match nanocrystal conductance.
A phase diagram for electron transport behavior in nanocrystal films was developed.
Abstract
In bulk semiconductor materials, the insulator-metal transition (IMT) is governed by the concentration of conduction electrons. Meanwhile, even when fabricated from metallic building blocks, nanocrystal films are often insulating with inter-nanocrystal contacts acting as electron transport bottlenecks. Using a library of transparent conducting tin-doped indium oxide nanocrystal films with varied electron concentration, size, and contact area, we test candidate criteria for the IMT and establish a phase diagram for electron transport behavior. From variable temperature conductivity measurements, we learn that both the IMT and a subsequent crossover to conventional metallic behavior near room temperature are governed by the conductance of the inter-nanocrystal contacts. To cross the IMT, inter-nanocrystal coupling must be sufficient to overcome the charging energy of a nanocrystal, while…
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Taxonomy
TopicsZnO doping and properties · Semiconductor materials and devices · Thin-Film Transistor Technologies
