Quadrupolar interaction induced frequency shift of 131Xe nuclear spins on the surface of silicon
Yao Chen, Mingzhi Yu, Yintao Ma, Libo Zhao, Yanbin Wang, Ju Guo,, Qijing Lin, Zhuangde Jiang

TL;DR
This study investigates how silicon walls in micro-machined vapor cells induce a quadrupolar frequency shift in 131Xe nuclear spins, affecting the stability of atomic spin gyroscopes and providing insights into surface interactions.
Contribution
It provides the first measurement of the quadrupolar frequency shift of 131Xe caused by silicon surfaces and analyzes temperature dependence of spin relaxation and frequency shifts.
Findings
Measured the twisted angle of 131Xe spins at 29×10^-6 rad.
Determined the desorption energy of 131Xe from silicon as 0.009 eV.
Analyzed temperature effects on spin relaxation and frequency shifts.
Abstract
The combination of micro-machined technology with the Atomic Spin Gyroscope(ASG) devices could fabricated Chip Scale Atomic Spin Gyroscope(CASG). The core of the gyroscope is a micro-machined vapor cell which contains alkali metal and isotope enriched noble gases such as 129Xe and 131Xe. The quadrupolar frequency shift of 131Xe is key parameters which could affect the drift of the ASG and is related to the material of the cell in which they are contained. In micro machined technology, the typical utilized material is silicon. In this article, we studied the electric quadrupolar frequency shift of 131Xe atoms with the silicon wall of the micro-machined vapor cell. A cylinder micro-machined vapor cell is utilized in the experiment and a large part of the inner cell surface is composed of silicon material. We studied the temperature dependence of the 129Xe spin relaxation and 131Xe…
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