Spin Relaxation in Quasi-1D GaAs Mesowires: Control via Electric Field and Aspect Ratio

TL;DR

This study investigates spin relaxation in GaAs quasi-1D mesowires using spin noise spectroscopy, demonstrating control over relaxation times through electric fields and aspect ratio modifications, with implications for scalable spintronics.

Contribution

It introduces a novel application of spin noise spectroscopy to measure and control spin relaxation in GaAs mesowires, expanding understanding beyond bulk and 2D systems.

Findings

Higher spin-relaxation times in mesowires compared to bulk

Electric field and aspect ratio influence spin relaxation times

Spectral data interpreted via Glazov-Sherman model

Abstract

We report on the measurements of spin relaxation in GaAs quasi-one-dimensional mesowires, relying on spin noise spectroscopy, thus adding to the existing body of spin relaxation studies in bulk, two-dimensional and zero dimensional systems. In addition to temperature and magnetic field dependence, we modify the spin relaxation time via applied electric field and aspect ratio of the mesowires, suggesting that scalable spintronics devices with controllable spin relaxation are achievable. Overall, we observed higher spin-relaxation time in mesowires compared to bulk with a spin noise exhibiting Dyakonov-Perel scattering and other scattering behavior. Spectral spin noise data are interpreted in part via Glazov-Sherman model, where both, diffusive and ballistic spin relaxation are accounted for.