Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing

TL;DR

This paper demonstrates that UV laser annealing can rapidly recrystallize arsenic-implanted amorphous silicon-on-insulator layers and activate dopants without increasing junction depth, suitable for low thermal budget device fabrication.

Contribution

It introduces a microsecond-scale UV laser annealing process for recrystallization and dopant activation in arsenic-implanted SOI, avoiding junction deepening and enabling low thermal budget integration.

Findings

Successful monocrystalline recrystallization within microseconds.

Dopant activation achieved without junction deepening.

Potential for low thermal budget device fabrication.

Abstract

UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable thermal budget is restricted. In this work, UV-LA is performed to regrow a SOI layer partially amorphized by arsenic ion implantation and to activate the dopants. In a microsecond scale (~10^-6 s to ~10^-5 s) UV-LA process, monocrystalline solid phase recrystallization and dopant activation without junction deepening is evidenced, thus opening various applications in low thermal budget integration flows.