Current controlled non-hysteresis magnetic switching in the ansence of magnetic field

TL;DR

This paper demonstrates non-hysteresis magnetic switching without external magnetic fields in a multilayer system, leveraging local ion implantation to influence domain wall motion via symmetry breaking and Ne9el wall motion.

Contribution

It introduces a method to achieve non-hysteresis magnetic switching using local ion implantation to control domain wall dynamics in multilayer structures.

Findings

Non-hysteresis magnetic switching achieved without external magnetic field.

Switching mechanism dominated by symmetry breaking and Ne9el wall motion.

Enables realization of AND and OR logic gates without resetting.

Abstract

By means of local ion implantation, we investigated the influence of lateral interface on current-induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in this system, the domain wall motion under electrical current can be affected by two mechanisms: symmetry breaking and current-driven N\'eel wall motion at the lateral interface. The dominant mechanism is symmetry breaking (current-driven N\'eel wall motion) at the large (small) current. Due to the competitive relationship of these two mechanisms, the non-hysteresis effect magnetic switching without an external magnetic field is obtained. Based on the non-hysteresis effect magnetic switching, we can realize AND and OR logic gates without resetting.