Prolonging Valley Polarization Lifetime through Gate-Controlled Exciton-to-Trion Conversion in Monolayer Molybdenum Ditelluride
Qiyao Zhang, Hao Sun, Jiacheng Tang, Xingcan Dai, Zhen Wang, Cun-Zheng, Ning

TL;DR
This study demonstrates that gate-controlled exciton-to-trion conversion in monolayer MoTe2 significantly prolongs valley polarization lifetime, achieving a 1000-fold increase and providing new insights into depolarization mechanisms for valleytronics.
Contribution
The paper introduces a novel gate-tuning strategy to convert excitons into trions, substantially extending valley polarization lifetime in monolayer MoTe2, without magnetic fields.
Findings
Valley polarization increases from near zero to 38% for excitons and 33% for trions.
Intervalley scattering time for excitons extends from 0.85 ps to 2.17 ps with gate tuning.
Valley lifetime for trions is enhanced by 1000 times compared to excitons.
Abstract
Monolayer 2D semiconductors provide an attractive option for valleytronics due to the valley-addressability by helicity-specific light beam. But the short valley lifetime for excitons have hindered potential valleytronic applications. In this paper, we demonstrate a strategy for prolonging the valley lifetime by converting excitons to trions through effective gate control and by taking advantage of much longer valley lifetime for trions than for excitons. In continuous-wave experiments, we found the valley polarization increases as gate voltage is tuned away from the charge neutrality, with the degree of valley polarization increased from near zero to 38 % for excitons and to 33 % for trions. This is the first successful observation of valley-polarization in MoTe2 without a magnetic field. In pump-probe experiments, we found that the intervalley scattering process of excitons is…
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