High Responsivity Gate Tunable UV-Visible Broadband Phototransistor Based on Graphene-WS2 Mixed Dimensional (2D-0D) Heterostructure
Shubhrasish Mukherjee, Didhiti Bhattacharya, Sumanti Patra, Sanjukta, Paul, Rajib Kumar Mitra, Priya Mahadevan, Atindra Nath Pal, and Samit Kumar, Ray

TL;DR
This paper reports a highly stable, gate-tunable broadband UV-Vis phototransistor based on a graphene-WS2 quantum dot heterostructure, demonstrating high responsivity, detectivity, and durability suitable for next-generation optoelectronics.
Contribution
It introduces a scalable, cost-effective hybrid 2D/0D heterostructure photodetector with enhanced photoresponse supported by theoretical calculations.
Findings
High photoresponsivity of 310 A/W at 365 nm
Durability with no photocurrent degradation over 4 months
Significant photocurrent enhancement with quantum dot morphology
Abstract
Recent progress in the synthesis of highly stable, eco-friendly, cost-effective transition metal-dichalcogenides (TMDC) quantum dots (QDs) with their broadband absorption spectrum and wavelength selectivity features have led to their increasing use in broadband photodetectors. With the solution based processing, we demonstrate a super large (~ 0.75 mm^2), UV-Vis broadband (365-633 nm), phototransistor made of WS_2 QDs decorated CVD graphene as active channel with extraordinary stability and durability in ambient condition (without any degradation of photocurrent till 4 months after fabrication). Here, colloidal 0D WS_2-QDs are used as the photo absorbing material and graphene acts as the conducting channel. A high photoresponsivity (3.1 x 10^2 A/W), higher detectivity (2.2 x 10^12 Jones) and low noise equivalent power (4 x 10^{-14} W/Hz^0.5) are obtained at a low bias voltage (V_{ds} =…
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Taxonomy
Topics2D Materials and Applications · Graphene research and applications · Quantum Dots Synthesis And Properties
