Charge-driven transtive devices via electric field control of magnetism in a helimagnet

TL;DR

This paper demonstrates charge-driven transistors and memtransistors in a magnetoelectric hexaferrite, enabling electric field control of magnetism with potential for novel circuit functionalities.

Contribution

It introduces the first realization of charge-driven transistors and memtransistors based on electric field control of magnetism in a specific hexaferrite material.

Findings

Large magnetization variation via electric field in the material.

Understanding of microscopic mechanisms for linear and nonlinear ME effects.

Establishment of charge-driven transtor and memtranstor in the system.

Abstract

Transtor and memtranstor are the fourth basic linear and memory elements, which allows direct coupling of charge (q) to magnetic flux ({\phi}) via linear and non-linear ME effects, respectively. It is found here that large variation of magnetization by electric field is realized in both linear and nonlinear hysteretic styles in a magnetoelectric Y-type hexaferrite Ba0.5Sr1.5Zn2(Fe0.92Al0.08)12O22 single-crystal. Moreover, based on the spin current model, the underlying microscopic mechanisms for generating the two types of linear and nonlinear M vs E curves are understood as E induced changes of cone angle and sign of P respectively, establishing the charge-driven transtor and memtranstor in the Y-type hexaferrite system. This work points to a promising pathway to develop unique circuit functionalities using the magnetoelectric materials.