Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience

TL;DR

This paper demonstrates that using polySi/SiOx passivating contacts with optimized gettering layers enhances the thermal and contamination resilience of silicon-based tandem solar cells, enabling higher efficiency and durability in harsh fabrication conditions.

Contribution

It introduces a novel gettering approach with polySi/SiOx stacks that significantly improves silicon bottom cell resilience in tandem solar cells during high-temperature processing.

Findings

PolySi layer thickness up to 400 nm prevents carrier lifetime reduction.

Contaminant concentration in Si bulk reduced by 99.9% due to gettering.

Achieved up to 7% efficiency in CZTS/Si tandem solar cells.

Abstract

Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom cell architectures are compatible, due to either epitaxy or high temperature constraints, where the interface between subcells is subject to a trade-off between transmittance, electrical interconnection, and bottom cell degradation. Using polySi/SiOx passivating contacts for Si, this degradation can be largely circumvented by tuning the polySi/SiOx stacks to promote gettering of contaminants admitted into the Si bottom cell during the top cell synthesis. Applying this concept to the low-cost top cell chalcogenides Cu2ZnSnS4 (CZTS), CuGaSe2 (CGSe) and AgInGaSe2 (AIGSe), fabricated under harsh S or Se atmospheres above 550 {\deg}C, we show that increasing the heavily-doped polySi layer thickness from 40 to up to 400 nm prevents a reduction in Si carrier lifetime by one order of magnitude, with final lifetimes above 500 us uniformly across areas up to 20 cm2. In all cases, the increased resilience was correlated with a 99.9% reduction in contaminant concentration in the c-Si bulk, provided by the thick polySi layer, which acts as a buried gettering layer in the tandem structure without compromising the Si passivation quality. The Si resilience decreased as AIGSe > CGSe > CZTS, in accordance with the measured Cu contamination profiles and higher annealing temperatures. An efficiency of up to 7% was achieved for a CZTS/Si tandem, where the Si bottom cell is no longer the limiting factor.